parameter conditions forward rectified current forward surge current reverse current diode junction capacitance ambient temperature = 55 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r c j a a a pf 1.0 30 5.0 v = v t = 25 c r rrm j o v = v t = 125 c r rrm j o 15 100 fmeg101dg FMEG102DG fmeg103dg 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =1.0a *5 reverse recovery time f , note 1 v f (v) *4 fmeg105dg 600 420 1.75 -55 to +150 t rr (ns) *5 50 100 200 600 0.875 fmeg105dg 400 280 400 storage temperature t stg o c +175 -65 (c) o operating temperature t, j 1.25 25 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr fmeg101dg thru fmeg105dg chip silicon rectifier 1.0a glass passivated sufrace mount efficient fast rectifiers - 50-600v sma package outline dimensions in inches and (millimeters) features batch process design, excellent power dissipation offers. ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? tiny plastic smd package. ? high current capability. ? fast switching for high efficiency. ? high surge current capability. ? glass passivated chip junction. ? lead- free parts meet rohs requirments. ? suffix "-h" indicates halogen-free parts, ex. fmeg101dg-h. mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, do-214ac / sma ? terminals: plated terminals, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.05 gram maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
rating and characteristic curves fig.1-typical forward characteristics fig.4-maximum non-repetitive forward surge current peak for ward surge current ,(a) fig.5-typical junction capacitance instantaneous for ward current ,(a) forward voltage,(v) 0 10 15 25 30 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 10 / 20ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive fig.2-typical forward current average for ward current ,(a) 0.2 0 0.4 0.6 0.8 1.0 1.2 derating curve reverse voltage,(v) junction cap acitance,(pf) 40 30 25 20 15 10 5 0 .01 .05 .1 .5 1 5 10 50 100 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0.375"(9.5mm) lead length ambient temperature ( c) 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 tj=25 c o pulse width =300us 1% duty cycle fmeg101dg - fmeg103dg fmeg104dg fmeg105dg 20 fmeg101dg thru fmeg105dg page 2/2 www.first-semi.com
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